Flash Cycling Test System

RBM-F25 SERIES

The monitor burn-in system evaluate various non-volatile memory such as Flash-memory, Fe-ram with high-speed test.
The expensive tester can be replaced by our F25, which has various pattern generator with complex algorithm, high speed in BAD block management, and Vth distribution measurement. F25 was developed under the concept of flexibility and expandability to meet Fe-ram, Mram, and future non-volatile memory.

Features

Write/erase cycling endurance test

Write/Erase cycling test can be performed for various type of flash-memory, NOR, NAND, AND, and etc, with large quantity and at high-speed. Efficient test is possible by using BAD block management and Ready/Busy signal control function. It is possible to write the initial data as ROM writers by using a master ROM function. TOC is available.

Specifications

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