TDDB Evaluation System
Material Insulation Characteristic Evaluation System
As wafer size is enlarged for mass production of high-density, high-function LSIs,reliability evaluation of oxide film is on increasing demand, which is key for LSI reliability. ESPEC'S TDDB Evaluation System will play an indispensable role for analyzing failure caused by pressure resistivity of thin insulation oxide film and characteristics and flattening of oxide film, at wafer, glass substrate, and package level.
Features
System configuration to fit number of measurement
MSM (DC multi-source/ measure=current/ voltage, output/ monitor) board consists of 4 MSMs with independent 5W high output. 1 unit comprises 10 MSM boards, with a total of 40 MSMs. The system can be upgraded according to measurement volume up to 5 units (2OO MSMs). Upgrade can be done by adding units.
Precision current and voltage impression and measurement
Current at 9 ranges, measurement resolution of maximum current ±1OOmA, and minimum current ±1pA. Voltage at 2 ranges, resolution of maximum voltage ±50V and minimum voltage 1 mV, enabling wide and precise impression and measurement.
Measurement at minimum 10 msec
Delivers high-speed measurement for multiple channels. Measures at top speed of lO msec per 40 channels, while acquiring data. Various evaluation items The TDDB Evaluation System is configured for wafer level and liquid crystal glass substrate level, by effectively systemizing DC multisource/ measure. It also applies for requirements of QDB evaluation and TZDB evaluation, while FET property evaluation can also be realized by exchanging software.
Specifications
| Voltage range | Resolution | Accuracy | Max current |
|---|---|---|---|
| ±10V | 1mV | ±(0.2%+10mV) | 100mA |
| ±50V | 10mV | ±(0.2%+50mV) | 100mA |
| Current range | Resolution | Accuracy | Max current |
|---|---|---|---|
| ±100mA | 100µA | ±(0.5%+100µA+2µAx Vo) | 50V |
| ±10mA | 10µA |
±(0.5%+10µA+200nAx Vo) | |
| ±1mA | 1µA | ±(0.5%+1µA+20nAx Vo) | |
| ±100µA | 100nA |
±(0.5%+100nA+2nAx Vo) | |
| ±10µA | 10nA | ±(1.0%+10nA+200pAx Vo) | |
| ±1µA | 1nA |
±(1.0%+1nA+20pAx Vo) | |
| ±100nA | 100pA | ±(1.0%+100pA+2pAx Vo) | |
| ±10nA | 10pA | ±(2.0%+10pA+200fAx Vo) | |
| ±1nA | 1pA | ±(2.0%+1pA+20fAx Vo) |
Accuracy: ±(set value or % of specified value) ±(offset), Vo: output voltage (V)